Properties of narrow gap quantum dots and wells in the InAs/InSb/GaSb systems

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 20, Issue 3-4, 2004, Pages 204-210

  Nicholas, R J ^a   Shields, P A ^a   Child, R A ^a   Li, L J ^a   Alphandery E ^a   Mason, N J ^a   Bumby, C ^a  

^a UNIVERSITY OF OXFORD   (United Kingdom)

Author keywords

GaSb; InAs; InSb; MOVPE; Quantum dots; Quantum well

Indexed keywords

ATOMIC FORCE MICROSCOPY; CARRIER CONCENTRATION; CYCLOTRONS; DEPOSITION; ELECTROLUMINESCENCE; LATTICE CONSTANTS; LIQUID PHASE EPITAXY; MAGNETIC FIELDS; METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE; SELF ASSEMBLY; SEMICONDUCTING GALLIUM; SEMICONDUCTING INDIUM; SEMICONDUCTOR QUANTUM WELLS; TRANSMISSION ELECTRON MICROSCOPY;

BANDGAPS; GROWTH RATES; LATTICE MISMATCH;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0347129561     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2003.08.004     Document Type: Conference Paper

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