Electron microscopy investigation of the defect configuration in CdSe/ZnSe quantum dot structures

Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties

Volumn 82, Issue 7, 2002, Pages 1361-1380

  Luvinov, D ^a   Rosenauer, A ^a   Gerthsen, D ^a   Preis, H ^b  

^a UNIVERSITY OF KARLSRUHE   (Germany)

^b INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECTS; GROWTH (MATERIALS); MOLECULAR BEAM EPITAXY; PHASE TRANSITIONS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING CADMIUM COMPOUNDS; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS; STACKING FAULTS; THICKNESS MEASUREMENT; TRANSMISSION ELECTRON MICROSCOPY; VECTORS;

BURGERS VECTOR; CAP LAYER THICKNESS; DEFECT CONFIGURATION; SHOCKLEY PARTIAL DISLOCATIONS; STAIR ROD DISLOCATIONS; THREE DIMENSIONAL GROWTH; TWO DIMENSIONAL GROWTH;

HETEROJUNCTIONS;

EID: 0037053496     PISSN: 01418610     EISSN: None     Source Type: Journal    
DOI: 10.1080/01418610208235677     Document Type: Article

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