Charge trapping dependence on the physical structure of ultra-thin ALD-HfSiON/TiN gate stacks

IEEE International Integrated Reliability Workshop Final Report

Volumn 2005, Issue , 2005, Pages 89-90

  Krishnan, Siddarth A ^a   Quevedo Lopez, M A ^b   Choi, Rino ^a   Kirsch, Paul D ^c   Young, Chadwin ^a   Harris, Rusty ^d   Peterson, Jeff J ^e   Li, Hong Jyh ^f   Lee, Byoung Hun ^c   Lee, Jack C ^g  

^a SEMATECH   (United States)

^b TI

^c IBM   (United States)

^d AMD

^e INTEL CORPORATION   (United States)

^f Infineon

^g The University of Texas at Austin   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CRYSTALLIZATION; DIELECTRIC MATERIALS; SEMICONDUCTOR DEVICES; SILICON COMPOUNDS; ULTRATHIN FILMS;

BIAS TEMPERATURE INSTABILITY (PBTI); SION INTERFACE; SUPPRESSED CRYSTALLIZATION; TIN GATE STACKS;

CHARGE TRAPPING;

EID: 33847715132     PISSN: 19308841     EISSN: 23748036     Source Type: Conference Proceeding    
DOI: 10.1109/IRWS.2005.1609570     Document Type: Conference Paper

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