Influence of H2/SiH4 ratio on the deposition rate and morphology of polycrystalline silicon films deposited by atmospheric pressure plasma chemical vapor deposition

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 45, Issue 4 B, 2006, Pages 3581-3586

  Ohmi, Hiromasa ^a   Kakiucht, Hiroaki ^a   Yasutake, Kiyoshi ^a   Nakahama, Yasuji ^b   Ebata, Yusuke ^b   Yoshii, Kumayasu ^a   Mori, Yuzo ^a  

^a OSAKA UNIVERSITY   (Japan)

^b SHARP CORPORATION   (Japan)

Author keywords

Atmospheric pressure plasma CVD; Crystallinity; High rate deposition; Low temperature growth; Polycrystalline silicon film; X ray diffraction

Indexed keywords

ATMOSPHERIC PRESSURE; CRYSTAL DEFECTS; CRYSTAL ORIENTATION; DEPOSITION; LOW TEMPERATURE OPERATIONS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POLYSILICON; X RAY DIFFRACTION;

ATMOSPHERIC PRESSURE PLASMA CVD; CRYSTALLINITY; HIGH RATE DEPOSITION; LOW TEMPERATURE GROWTH;

THIN FILMS;

EID: 33646922020     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.3581     Document Type: Article

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