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Applied Physics A: Materials Science and Processing

Volumn 81, Issue 6, 2005, Pages 1139-1144

Defect-free growth of epitaxial silicon at low temperatures (500-800°C) by atmospheric pressure plasma chemical vapor deposition

(5) Yasutake, K a Kakiuchi, H a Ohmi, H a Yoshii, K a Mori, Y a

a OSAKA UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATMOSPHERIC PRESSURE; ATOMIC FORCE MICROSCOPY; COMPOSITION; EMISSION SPECTROSCOPY; EPITAXIAL GROWTH; HIGH ENERGY ELECTRON DIFFRACTION; LOW TEMPERATURE EFFECTS; OPTIMIZATION; PARAMETER ESTIMATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON WAFERS; TRANSMISSION ELECTRON MICROSCOPY;

DEFECT-FREE GROWTH; EMISSION INTENSITY; SUBSTRATE TEMPERATURE; VERY HIGH FREQUENCY (VHF) POWER;

SILICON;

EID: 24144497409 PISSN: 09478396 EISSN: None Source Type: Journal
DOI: 10.1007/s00339-004-3198-5 Document Type: Article

Times cited : (27)

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