Polycrystalline silicon film formation at low temperature using ultra-high-frequency plasma enhanced chemical vapor deposition

Materials Letters

Volumn 41, Issue 1, 1999, Pages 16-19

  Mebarki, B ^a   Sumiya, S ^a   Yoshida, R ^a   Ito, M ^a   Hori, M ^a   Goto, T ^a   Samukawa, S ^b   Tsukada, T ^b  

^a NAGOYA UNIVERSITY   (Japan)

^b NONE

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; CRYSTAL GROWTH; ELLIPSOMETRY; LOW TEMPERATURE PHENOMENA; MIXTURES; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POLYCRYSTALLINE MATERIALS; SUBSTRATES; SYNTHESIS (CHEMICAL); THIN FILMS;

ULTRA HIGH FREQUENCY PLASMA ENHANCED CHEMICAL DEPOSITION;

SEMICONDUCTING SILICON;

EID: 0033204563     PISSN: 0167577X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-577X(99)00097-X     Document Type: Article

References (12)

1. Yamamoto M., Hanna J., Miyauchi M. Appl. Phys. Lett. 63:1993;2508.
2. Ishihara S., He D., Shimizu I. Jpn. J.Appl. Phys. 33:1994;51.
3. Nakajima A., Sugita Y., Kawamura K., Tomita H., Yokoyama N. Jpn. J. Appl. Phys. 35:1995;189.
4. Nakahata K., Miida A., Kamiya T., Maeda Y., Fortmann C.M., Shimizu I. Jpn. J. Appl. Phys. 37:1998;1026.
5. Brenot R., Vanderhaghen R., Drevillon B., Roca i Cabarrocas P. Appl. Phys. Lett. 74(1):1999;58.
6. Shirai H., Arai T. Thin Solid Films. 296:1997;19.
7. Nozawa R., Ito M., Takeda H., Hori M., Goto T. J. Appl. Phys. 79:1997;8035.
8. Samukawa S. Appl. Phys. Lett. 133:1994;2133.
9. Samukawa S., Nakagawa Y., Tsukuda T., Ueyama H., Shinohara K. Jpn. J. Appl. Phys. 34:1995;6805.
10. Samukawa S., Nakano T. J. Vac. Sci. Technol. A. 14(3):1996;1002.
11. Kaneko T., Onisawa K., Wakagi M., Kita Y., Minemura T. Jpn. J. Appl. Phys. 32:1993;4907.
12. Fried M., Lohner T. J. Appl. Phys. 71-10:1992;5260.