Structural and electrical properties of polycrystalline silicon produced by low-temperature Ni silicide mediated crystallization of the amorphous phase

Journal of Applied Physics

Volumn 87, Issue 1, 2000, Pages 609-611

  Yoon, Soo Young ^a   Park, Seong Jin ^a   Kim, Kyung Ho ^a   Jang, Jin ^a   Kim, Chae Ok ^b  

^a Kyung Hee University   (South Korea)

^b Hanyang University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001080129     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.371906     Document Type: Article

References (10)

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