A 6F2 DRAM technology in 60nm era for gigabit densities

Digest of Technical Papers - Symposium on VLSI Technology

Volumn 2005, Issue , 2005, Pages 36-37

  Cho, Changhyun ^a   Song, Sangho ^a   Kim, Sangho ^a   Jang, Sungho ^a   Lee, Sungsam ^a   Kim, Hyungtak ^a   Sung, Yangsoo ^a   Jeon, Sangmin ^a   Yeo, Gisung ^a   Kim, Youngsun ^a   Kim, Yungi ^a   Jin, Gyoyoung ^a   Kim, Kinam ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; DIELECTRIC MATERIALS; ETCHING; LEAKAGE CURRENTS; LITHOGRAPHY;

GIGABIT DENSITIES; HIGHLY SELECTIVE ETCHING PROCESS; MIM CELL CAPACITORS;

DYNAMIC RANDOM ACCESS STORAGE;

EID: 33745140874     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/.2005.1469202     Document Type: Conference Paper

References (5)

1. Kinam Kim et. al., IEEE Trans. SM., vol. 15, p. 137-143 (2002)
2. J.Y. Kim et al., Symp. on VLSI Tech., p.11-12 (2003).
3. J.Y. Kim et. al., to be published.
4. Changhyun Cho, et. al., Symp. on VLSI Tech., p.32-33 (2004).
5. Deok-Sin Kil, et. al., Symp. on VLSI Tech., p.126-127 (2004).