Development of highly robust Nano-mixed HfxAlyOz dielectrics for TiN/HfxAlyOz/TiN capacitor applicable to 65nm generation DRAMs

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2004, Pages 126-127

  Kil, Deok Sin ^a   Hong, Kwon ^a   Lee, Kee Jeung ^a   Kim, Joosung ^a   Song, Han Sang ^a   Park, Ki Seon ^a   Roh, Jae Sung ^a   Sohn, Hyun Chul ^a   Kim, Jin Woong ^a   Park, Sung Wook ^a  

^a Hynix Semiconductor Inc   (South Korea)

Author keywords

Al2O3; ALD; HfO2; TIT Capacitor

Indexed keywords

ALUMINA; DYNAMIC RANDOM ACCESS STORAGE; HAFNIUM ALLOYS; LEAKAGE CURRENTS; PERMITTIVITY; PYROLYSIS; THIN FILMS; TITANIUM NITRIDE;

AL2O3; ATOMIC LAYER DEPOSITION (ALD); HFO2; TIT CAPACITORS;

DIELECTRIC MATERIALS;

EID: 4544231566     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)

1. S.H. Oh, et al., VLSI Tech. Dig., pp 73, 2003
2. M.Y. Ho, et al., Appl. Phys. Lett.81, pp 4218, 2002
3. J.H. Lee, et al., IEDM Tech. Dig., pp 221, 2002