New buffer layer technique using underlying epitaxial AlN films for high-quality GaN growth

Materials Research Society Symposium - Proceedings

Volumn 693, Issue , 2002, Pages 219-223

  Shibata, Tomohiko ^a   Kida, Yoshihiro ^a   Miyake, Hideto ^a   Hiramatsu, Kazumasa ^a   Asai, Keiichiro ^a   Nagai, Teruyo ^a   Sumiya, Shigeaki ^a   Tanaka, Mitsuhiro ^a   Oda, Osamu ^a  

^a MIE UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; INTERFACES (MATERIALS); SEMICONDUCTING GALLIUM COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY;

EDGE-TYPE DISLOCATIONS; FULL WIDTH AT HALF MAXIMUM; MOSAICITY; SCREW-TYPE THREADING DISLOCATIONS; X-RAY ROCKING CURVE;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 0036375686     PISSN: 02729172     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (8)