Hole confinement and 1/f noise characteristics of SiGe double-quantum-well p-Type metal-oxide-semiconductor field-effect transistors

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 45, Issue 5 A, 2006, Pages 4006-4008

  Lin, Yu Min ^a   San Lein, W U ^b   Chang, Shoou Jinn ^a   Chen, Pang Shiu ^c   Liu, Chee Wee ^d,e  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b CHENG SHIU UNIVERSITY   (Taiwan)

^c MINGHSIN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

^d NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^e INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

Author keywords

Carrier confinement; Double quantum wells; Gate voltage swings

Indexed keywords

DEGRADATION; INTERFACES (MATERIALS); SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; SILICON; TRANSCONDUCTANCE;

CARRIER CONFINEMENT; DOUBLE QUANTUM WELLS; GATE VOLTAGE SWINGS;

MOSFET DEVICES;

EID: 33646855601     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.4006     Document Type: Article

References (9)

1. M. J. Palmer, G. Braithwaite, T. J. Grasby, P. J. Philips, M. J. Preset, E. H. C. Parker, T. E. Whall, C. P. Parry, A. M. Waite, A. G. R. Evans, S. Roy, J. R. Watling, S. Kaya and A. Asenov: Appl. Phys. Lett. 78 (2001) 1424.
2. Y. M. Lin, S. L. Wu, S. J. Chang, P. S. Chen and C. W. Liu: Mater. Sci. Semicond. Process. 8 (2005) 347.
3. P. W. Li and W. M. Liao: Solid-State Electron. 46 (2002) 39.
4. C. Y. Su, S. L. Wu, S. J. Chang and L. P. Chen: Jpn. J. Appl. Phys. 39 (2000) L579.
5. D. K. Nayak, J. C. S. Woo, G. K. Yabiku, K. P. MacWilliams, J. S. Park and K. L. Wang: IEEE Electron Device Lett. 14 (1993) 520.
6. O. Chretien, M. Y. A. Yousif, O. Nur, C. J. Patel and M. Willander: Semicond. Sci. Technol. 13 (1998) 999.
7. M. Y. A. Yousif, O. Nur, O. Chretien, Y. Fu and M. Willander: Solid-State Electron. 42 (1998) 951.
8. B. R. Cyca, K. G. Robins, N. G. Tarr, D. X. Xu, J.-P. Noel, D. Landheer and M. Simard-Normandin: J. Appl. Phys. 81 (1997) 8079.
9. S. J. Mathew, G. Niu, W. B. Dubbelday, J. D. Cressler, J. A. Ott, J. O. Chu, P. M. Mooney, K. L. Kavanagh, B. S. Meyerson and I. Lagnado: IEDM Tech. Dig., 1997, p. 815.