Strained Si1-xGex normal-graded channel p-type metal oxide semiconductor field effect transistor

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 39, Issue 6 B, 2000, Pages

  Su, Chia Yi ^a   Wu, San Lein ^a   Chang, Shoou Jinn ^a   Chen, Liang Po ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DIELECTRIC FILMS; GATES (TRANSISTOR); SEMICONDUCTING SILICON COMPOUNDS; STRAIN; STRESS RELAXATION; THERMOOXIDATION; TRANSCONDUCTANCE;

SILICON GERMANIDE; ULTRAHIGH VACUUM CHEMICAL VAPOR DEPOSITION (UHVCVD);

MOSFET DEVICES;

EID: 0034205069     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.l579     Document Type: Article

References (12)