SiGe/Si PMOSFET using graded channel technique

Materials Science in Semiconductor Processing

Volumn 8, Issue 1-3 SPEC. ISS., 2005, Pages 347-351

  Lin, Yu Min ^a   Wu, San Lein ^b   Chang, Shoou Jinn ^a   Chen, Peng Shiu ^c   Liu, Chee Wee ^c  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b CHENG SHIU UNIVERSITY   (Taiwan)

^c INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

Author keywords

Linear operation range; PMOSFET; Strain graded Si1 xGex well

Indexed keywords

CARRIER MOBILITY; CHEMICAL VAPOR DEPOSITION; DOPING (ADDITIVES); HETEROJUNCTIONS; OXIDATION; PASSIVATION; RAPID THERMAL ANNEALING; SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS; THIN FILMS; THRESHOLD VOLTAGE; TRANSCONDUCTANCE; ULTRAHIGH VACUUM;

LINEAR OPERATION RANGE; P-TYPE SI/SIGE METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS; PMOSFET; STRAIN-GRADED SI1-XGEX WELL;

MOSFET DEVICES;

EID: 13244292560     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2004.09.044     Document Type: Conference Paper

References (8)

1. G. Freeman, B. Jagannathan, S.J. Jeng, J.S. Rieh, A.D. Stricker, D.C. Ahlgren, and S. Subbanna Transistor design and application considerations for >200-GHz SiGe HBTs IEEE Trans Electron Devices 50 2003 645 655
2. N. Guofu, J.D. Cressler, S. Zhang, A. Joseph, and D. Harame Noise-gain tradeoff in RF SiGe HBTs Solid State Electron 46 2002 1445 1451
3. Lu W, Hammond R, Koester SJ, Wang XW, Chu JO, Ma TP, Adesida I. High performance 0.15 μm self-aligned SiGe p-MOS-MODFET's with SiN gate dielectric. In: IEDM Technical Digest, 1999. p. 577-80.
4. M. Arafa, P. Fay, K. Ismail, J.O. Chu, B.S. Meyerson, and I. Adesida DC and RF performance of 0.25 μm p-type SiGe MODFET IEEE Electron Device Lett 17 1996 449 451
5. S. Verdonckt-Vandebroek, E.F. Crabbe, B.S. Meyerson, D.L. Harame, P.J. Restle, J.M.C. Stork, and J.B. Johnson SiGe-channel heterojunction p-MOSFET's IEEE Trans Electron Devices 41 1994 90 101
6. Z. Shi, D. Onsongo, and S.K. Banerjee Mobility and performance enhancement in compressively strained SiGe channel PMOSFETs Appl Surf Sci 224 2004 248 253
7. D.K. Nayak, J.C.S. Woo, J.S. Park, K.L. Wang, and K.P. MacWilliams High mobility p-channel metal semiconductor field-effect transistor on strained Si Appl Phys Lett 62 1993 2853 2855
8. P.W. Chien, S.L. Wu, S.C. Lee, S.J. Chang, H. Miura, S. Koh, and Y. Shiraki P-type Delta Doped SiGe/Si Heterostructure field effect transistors Electron Lett 38 2002 1289 1291