On the role of tunneling in metal-semiconductor nanocontacts

Journal of Experimental and Theoretical Physics

Volumn 99, Issue 1, 2004, Pages 211-216

  Vostokov, N V ^a   Shashkin, V I ^a  

^a INSTITUTE FOR PHYSICS OF MICROSTRUCTURES   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRON TUBE COMPONENTS; HEAT TRANSFER; SEMICONDUCTOR METAL BOUNDARIES;

CURRENT TRANSFER; INFINITE PLANE CONTACT; METAL SEMICONDUCTOR NANOCONTACTS; NANOPARTICLES;

NANOSTRUCTURED MATERIALS;

EID: 33646853630     PISSN: 10637761     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1787094     Document Type: Article

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