Local surface band modulation with MBE-grown InAs quantum dots measured by atomic force microscopy with conductive tip

Journal of Crystal Growth

Volumn 201, Issue , 1999, Pages 1194-1197

  Tanaka, Ichiro ^a,b   Kamiya, I ^a,c   Sakaki, H ^a,d  

^a JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^b 640 8510 ^*  (Japan)

^c UNIVERSITY OF TOKYO   (Japan)

^d INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CURRENT VOLTAGE CHARACTERISTICS; MODULATION; OXIDATION; SCHOTTKY BARRIER DIODES; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM DOTS; WETTING;

CONDUCTIVE TIP; LOCAL SURFACE BAND MODULATION;

MOLECULAR BEAM EPITAXY;

EID: 0032629464     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(99)00029-9     Document Type: Article

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