Charge tunable ErAs islands for backgate isolation in AlGaAs heterostructures

Applied Physics Letters

Volumn 82, Issue 16, 2003, Pages 2631-2633

  Dorn, A ^a   Peter, M ^a   Kicin, S ^a   Ihn, T ^a   Ensslin, K ^a   Driscoll, D ^b   Gossard, A C ^b  

^a ETH ZURICH   (Switzerland)

^b University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; ELECTRON GAS; MOLECULAR BEAM EPITAXY; SCHOTTKY BARRIER DIODES; SEMICONDUCTING ALUMINUM COMPOUNDS; TUNING;

TWO DIMENSIONAL ELECTRON GASES;

HETEROJUNCTIONS;

EID: 0037883740     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1566793     Document Type: Article

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