Characterization of electrical properties of micro-Schottky contacts on epitaxial lateral overgrowth GaN

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 4 B, 2003, Pages 2250-2253

  Kumada, Keiichiro ^a   Murata, Tomohiro ^a   Ohno, Yutaka ^a   Kishimoto, Shigeru ^a   Maezawa, Koichi ^a   Mizutani, Takashi ^a   Sawaki, Nobuhiko ^a  

^a NAGOYA UNIVERSITY   (Japan)

Author keywords

Dislocations; ELO; Etch pit; GaN; I V characteristics; Micro Schottky contact

Indexed keywords

ATOMIC FORCE MICROSCOPY; CARRIER CONCENTRATION; CARRIER MOBILITY; CHEMICAL VAPOR DEPOSITION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC PROPERTIES; EPITAXIAL GROWTH; ETCHING;

EPITAXIAL LATERAL OVERGROWTH; ETCH PIT; MICRO-SCHOTTKY CONTACT ARRAY;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0038347878     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.2250     Document Type: Article

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