Deep and shallow electronic states at ultrathin InAs insertions in GaAs investigated by capacitance spectroscopy

Journal of Applied Physics

Volumn 84, Issue 11, 1998, Pages 6135-6140

  Krispin, P ^a   Lazzari, J L ^a,b   Kostial, H ^a  

^a PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

^b CAMPUS DE LUMINY   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001569531     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.368927     Document Type: Article

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