Defect levels in n-type gallium arsenide and gallium aluminum arsenide layers

Physica Status Solidi (A) Applied Research

Volumn 183, Issue 2, 2001, Pages 281-297

  Saxena, A K ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY ROORKEE   (India)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CAPACITANCE MEASUREMENT; DEFECTS; ENERGY GAP; LIQUID PHASE EPITAXY; METALLORGANIC VAPOR PHASE EPITAXY; PRESSURE; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR QUANTUM WELLS; SUPERSATURATION; VOLTAGE MEASUREMENT;

BAND GAP; BRIDGMAN ANVIL SYSTEM; CYLINDER PISTON ASSEMBLY; ENERGY PRESSURE COEFFICIENT; GALLIUM ALUMINUM ARSENIDE LAYERS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0035249939     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(200102)183:2<281::AID-PSSA281>3.0.CO;2-V     Document Type: Article

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