SIMS study of atom migration in GaAs/AlGaAs quantum well laser structures

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4237, Issue , 2000, Pages 113-118

  Kaniewska, M ^a   Barcz, A ^a   Krynska, D ^a   Wesolowski, M ^a  

^a Department of Micro and Nanotechnology of Wide Bandgap Semiconductors   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SEMICONDUCTOR LASERS; THERMAL EFFECTS;

ALUMINUM GALLIUM ARSENIDE; ATOM MIGRATION; DISPLACEMENT HETEROINTERFACE;

QUANTUM WELL LASERS;

EID: 0033645301     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)