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Volumn 17, Issue 1-2, 2001, Pages 283-286
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DLTS study of deep levels in GRIN-SCH-SQW GaAs/AlGaAs laser diode structures grown by MBE
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Author keywords
Deep level defects; GaAs AlGaAs based lasers; Photoluminescence; Threshold currents
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Indexed keywords
CRYSTAL DEFECTS;
DEEP LEVEL TRANSIENT SPECTROSCOPY;
ELECTRIC CURRENTS;
HETEROJUNCTIONS;
LASER PULSES;
MOLECULAR BEAM EPITAXY;
PHOTOLUMINESCENCE;
REFRACTIVE INDEX;
SEMICONDUCTING ALUMINUM COMPOUNDS;
SEMICONDUCTING GALLIUM ARSENIDE;
SEMICONDUCTOR GROWTH;
ALUMINUM GALLIUM ARSENIDE;
DEEP LEVEL DEFECTS;
GRADED REFRACTIVE INDEX SEPARATE CONFINEMENT HETEROSTRUCTURES;
THRESHOLD CURRENTS;
QUANTUM WELL LASERS;
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EID: 0035360315
PISSN: 09253467
EISSN: None
Source Type: Journal
DOI: 10.1016/S0925-3467(01)00093-3 Document Type: Conference Paper |
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Times cited : (8)
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References (5)
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