Development of device fabrication process for strained layer superlattice IR detectors

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6127, Issue , 2006, Pages

  Rhiger, David R ^a   Kvaas, Robert E ^a   Liguori, Michael ^a   Gritz, Michael A ^a   Crawford, Gina ^a   Hill, Cory J ^b  

^a RAYTHEON COMPANY   (United States)

^b CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

Ellipsometry; Etching; Fabrication process; InAs GaSb; Strained layer superlattice

Indexed keywords

ELLIPSOMETRY; ETCHING; PASSIVATION; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR SUPERLATTICES;

FABRICATION PROCESS; INAS/GASB; STRAINED LAYER SUPERLATTICE;

INFRARED DETECTORS;

EID: 33646819691     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.640084     Document Type: Conference Paper

References (23)

1. G.J. Brown, "Type-II InAs/GalnSb superlattices for infrared detection: an overview," Proc. SPIE 5783, 65-77 (2005).
2. H. Mohseni, M. Razeghi, G. J. Brown, and, Y. S. Park, "High-performance InAs'GaSb superlattice photodiodes for the very long wavelength infrared range," Appl. Phys Lett. 78, 2109-2109 (2001).
3. E. H. Aifer, J. G. Tischler, J. H. Warner, I. Vurgaftman, J. C. Kim, J.R. Meyer, B. R. Bennett, L. J. Whitman, E. M. Jackson, and J. R. Lorentzen, "W-structured type-II superlattice based long and very-long wavelength infrared photodiodes," Proc. SPIE 5732, 259-272 (2005).
4. C.J. Hill, S.S. Keo, J.M. Mumolo, and S.D. Gunapala, "Passivation of MBE grown GalnSb/InAs superlattice photodiodes," Proc. SPIE 5153, 106-111 (2005).
5. A. Gin, Y. Wei, A. Hood, A. Bajowala, V. Yazdanpanah, M. Razeghi, and M. Tidrow, "Ammonium sulfide passivation of type-II InAs/GaSb superlattice photodiodes," Appl. Phys Lett. 84, 2037-2039 (2004).
6. A. Hood, Y. Wei, A. Gin, M. Razeghi, M.Z. Tidrow, and V. Nathan, "Passivation of type-II superlattice photodetectors," Proc. SPIE 5732, 316-325 (2005).
7. Y. Wei, A. Hood, H. Yau, V. Yazdanpanah, M. Razeghi, M.Z. Tidrow, and V. Nathan, "High-performance type-II InAs/GaSb superlattice photodiodes with cutoff wavelength around 7 μm" Appl. Phys. Lett. 86, 091109-1(-3) (2005).
8. A. Gin, Y. Wei, J. Bae, A. Hood, J. Nah, and M. Razeghi, "Passivation of type-II InAs/GaSb superlattice photodiodes," Thin Solid Films 447-448, 489-492 (2004).
9. A. Hood, M. Razeghi, E.H. Aifer, and G.J. Brown, "On the performance and surface passivation of type II InAs/GaSb superlattice photodiodes for the very-long-wavelength infrared," Appl. Phys. Lett. 87, 151113-1(-3) (2005).
10. C.J. Sandroff, M.S. Hegde, L.A. Farrow, C.C. Chang, and J.P. Harbison, "Electronic passivation of GaAs surfaces through the formation of arsenic-sulfur bonds," Appl. Phys. Lett. 54, 362-364 (1989).
11. 2S solutions: a surface chemical study," J. Vac. Sci. Technol. A 11, 1083-1088 (1993).
12. x treatment," J. Electrochem. Soc. 144, 2106-2115 (1997).
13. D.Y. Petrovykh, M.J. Yang, and L.J. Whitman, "Chemical and electronic properties of sulfur-passivated InAs surfaces," Surface Sci. 523, 231-240 (2003).
14. x-treated InAs(001) surface studied by x-ray photoelectron spectroscopy and low-energy electron diffraction," Phys. Rev. B 56, 1084-1086 (1997).
15. M. Perotin, P. Coudray, L. Gouskov, H. Luquet, C. Llinares, J.J. Bonnet, L. Soonckindt, and B. Lambert, "Passivation of GaSb by sulfur treatment," J. Electronic Mater. 23, 7-12 (1994).
16. x-treated InSb(001) surface studied by using x-ray photoelectron spectroscopy, low-energy electron diffraction, and inverse photoemission spectroscopy," J. Vac. Sci. Technol. A 17, 421-424 (1999).
17. 2S solution and polyimide encapsulation," J. Appl. Phys. 97, 104506-1(-5) (2005).
18. x sulphidation," Semicond. Sci. Technol. 10, 95-100 (1995).
19. V.N. Bessolov and M.V. Lebedev, "Chalcogenide passivation of III-V semiconductor surfaces," Semiconductors 32, 1141-1156 (1998).
20. P.R. Norton, "Infrared image sensors," Optical Engrg. 30, 1649-1663 (1991).
21. D.R. Rhiger, "Use of ellipsometry to characterize the surface of HgCdTe," J. Electronic Mater. 22, 887-898 (1993).
22. D.E. Aspnes, J.B. Theeten, and F. Hottier, "Investigation of effective-medium models of microscopic surface roughness by spectroscopic ellipsometry," Phys. Rev. B 20, 3292-3302 (1979).
23. C. Pickering, "Infrared reflectivity measurements on bulk and epitaxial GaSb," J. Phys. C: Solid St. Phys. 13, 2959-2968 (1980).