High-performance type-II InAs/GaSb superlattice photodiodes with cutoff wavelength around 7 μm

Applied Physics Letters

Volumn 86, Issue 9, 2005, Pages 1-3

  Wei, Y ^a   Hood, A ^a   Yau, H ^a   Yazdanpanah, V ^a   Razeghi, M ^a   Tidrow, M Z ^b   Nathan, V ^c  

^a Northwestern University   (United States)

^b ARMED FORCES INSTITUTE OF PATHOLOGY   (United States)

^c AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER RECOMBINATION; BAND GAP; PHOTON DETECTORS; TUNNELING PROBABILITY;

ATOMIC FORCE MICROSCOPY; CURRENT DENSITY; ENERGY GAP; MATHEMATICAL MODELS; PASSIVATION; SUPERLATTICES;

PHOTODIODES;

EID: 17044412672     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1879113     Document Type: Article

References (6)

1. G. A. Sai-Halasz, R. Tsu, and L. Esaki, Appl. Phys. Lett. 30, 651 (1977).
2. F. Fuchs, U. Weimer, W. Pletschen, J. Schmitz, E. Ahlswede, M. Walther, J. Wagner, and P. Koidl, Appl. Phys. Lett. 71, 3251 (1997).
3. Y. Wei and M. Razeghi, Phys. Rev. B 69, 085316 (2004).
4. Y. Wei, A. Gin, M. Razeghi, and G. J. Brown, Appl. Phys. Lett. 80, 3262 (2002).
5. Y. Wei, A. Gin, M. Razeghi, and G. J. Brown, Appl. Phys. Lett. 81, 3675 (2002).
6. A. Gin, Y. Wei, A. Hood, A. Bajowala, V. Yazdanpanah, M. Razeghi, and M. Tidrow, Appl. Phys. Lett. 84, 2037 (2004).