Influence of growth conditions and surface reaction byproducts on GaN grown via metal organic molecular beam epitaxy: Toward an understanding of surface reaction chemistry

Journal of Electronic Materials

Volumn 35, Issue 4, 2006, Pages 562-567

  Pritchett, David ^a   Henderson, Walter ^a   Burnham, Shawn D ^a   Alan Doolittle, W ^a  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

Carbon; GaN; Photo assisted metal organic molecular beam epitaxy (MOMBE)

Indexed keywords

CRYSTALLINE QUALITY; GAN; IN-SITU OPTIMIZATION; PHOTO-ASSISTED METAL ORGANIC MOLECULAR BEAM EPITAXY (MOMBE);

CARBON; ETHYLENE; FILM GROWTH; MOLECULAR BEAM EPITAXY; OPTIMIZATION; ORGANOMETALLICS; SURFACE REACTIONS;

GALLIUM NITRIDE;

EID: 33646751509     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-006-0100-6     Document Type: Conference Paper

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