High-resolution transmission electron microscopy and electron energy-loss spectroscopy study of polycrystalline-Si/ZrO2/SiO2/Si metal-oxide-semiconductor structures

Journal of Electron Microscopy

Volumn 55, Issue 1, 2006, Pages 1-5

  Yang, Jun Mo ^a   Joong, Jung Kim ^b   Kim, Kyung Seob ^c   Lee, Wan Gyu ^a   Kawasaki, Masahiro ^d  

^a National Nano Fab Center (NNFC)   (South Korea)

^b TOHOKU UNIVERSITY   (Japan)

^c Yeojoo Institute of Technology   (South Korea)

^d JEOL LTD   (Japan)

Author keywords

Annular dark field scanning transmission electron microscopy; Electron energy loss spectroscopy; High resolution transmission electron microscopy; Si semiconductor; ZrO2

Indexed keywords

CRYSTAL ATOMIC STRUCTURE; DIELECTRIC DEVICES; DISSOCIATION; ELECTRON EMISSION; ELECTRON ENERGY LEVELS; ELECTRON ENERGY LOSS SPECTROSCOPY; ELECTRON SCATTERING; ELECTRONS; ENERGY DISSIPATION; OXIDE SEMICONDUCTORS; POLYCRYSTALLINE MATERIALS; SCANNING ELECTRON MICROSCOPY; SHEET METAL; SILICA; TRANSISTORS; ZIRCONIA; ZIRCONIUM;

ANNULAR DARK FIELD SCANNING TRANSMISSION ELECTRON MICROSCOPY; ATOMIC SCALE; CRYSTALLOGRAPHIC CHARACTERISTICS; ELECTRON ENERGY-LOSS SPECTROSCOPIES; HIGH-RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; INTERFACIAL CHARACTERISTICS; METAL OXIDE SEMICONDUCTOR STRUCTURE; POLYCRYSTALLINE-SI; SI SEMICONDUCTOR; ZRO 2 FILMS;

HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY;

EID: 33646732184     PISSN: 00220744     EISSN: 14779986     Source Type: Journal    
DOI: 10.1093/jmicro/dfi073     Document Type: Article

References (13)

1. Buchanan D A (1999) Scaling the gate dielectric: Materials, integration, and reliability. IBM J. Res. Develop. 43: 245-264.
2. Allan A, Edenfeld D, Joyner W H Jr., Kahng A B, Rodgers M, and Zorian Y (2002) 2001 Technology roadmap for semiconductors. Computer 35: 42-53.
3. 2 gate dielectrics for giga-scale integration of CMOS technologies. IEEE Electron Device Lett. 19: 423-425.
4. 3 films on Si. Appl. Phys. Lett. 76: 176-178.
5. Copel M, Gribelyuk M A, and Gusev E (2000) Structure and stability of ultrathin zirconium oxide layers on Si (001). Appl. Phys. Lett. 76: 436-438.
6. 2 or Si-O-N) underlayers. J. Appl. Phys. 92: 7168-7174.
7. Wilk G D, Wallace R M, and Anthony J M (2001) High-k gate dielectrics: Current status and materials properties considerations. J. Appl. Phys. 89: 5243-5275.
8. Shindo D and Hiraga K (1998) High-Resolution Electron Microscopy for Materials Science. (Springer-Verlag, Tokyo).
9. Muller D A, Sorsch T, Moccio S, Baumann F H, Evans-Lutterodt K, and Timp G (1999) The electronic structure at the atomic scale of ultrathin gate oxides. Nature 399: 758-761.
10. 2/Si stacks. J. Vac. Sci. Technol. B 23: 144-148.
11. 2/Si metal-oxide-semiconductor capacitors. J. Appl. Phys. 91: 414-419.
12. Porter D A, and Easterling K E (1992) Phase Transformations in Metals and Alloys, 2nd edn, Chapter 3. (Chapman and Hall, London).
13. 2-doped TZP. J. Electron Microsc. 46: 467-472.