Operation and design of metal-oxide tunnel transistors

Journal of Applied Physics

Volumn 84, Issue 9, 1998, Pages 5021-5031

  Rendell, R W ^a   Buot, F A ^a   Snow, E S ^a   Campbell, P M ^a   Park, D ^a   Marrian, C R K ^a   Magno, R ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 1642339159     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.368749     Document Type: Article

References (6)

1. F. A. Buot, R. W. Rendell, E. S. Snow, P. M. Campbell, D. Park, C. R. K. Marrian, and R. Magno, J. Appl. Phys. 84, 1133 (1998).
2. E. S. Snow, P. M. Campbell, R. W. Rendell, F. A. Buot, D. Park, C. R. K. Marrian, and R. Magno, Appl. Phys. Lett. 72, 3071 (1998).
3. E. S. Snow, P. M. Campbell, R. W. Rendell, F. A. Buot, D. Park, C. R. K. Marrian, and R. Magno, Semicond. Sci. Technol. 13, A75 (1998).
4. C.-K. Huang, W. E. Zhang, and C. H. Yang, IEEE Trans. Electron Devices 45, 842 (1998).
5. F. A. Buot, C. Scott, I. Mack, and K. J. Sieger, in Molecular Electronic Devices, edited by F. L. Carter, R. E. Siatkowski, and H. Wohltjen (North-Holland, New York, 1988), p. 255.
6. T. Martinelli, E. Menapace, and A. Ventura, Lett. Nuovo Cimento 20, 267 (1977).