Quantum mechanical simulation of charge distribution in schottky barrier MOSFETs

Journal of the Korean Physical Society

Volumn 45, Issue SUPPL., 2004, Pages

  Shin, Mincheol ^a   Jang, Moongyu ^b   Lee, Seongjae ^b  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

Device simulation; Quantum effect; Schottky barrier MOSFET

Indexed keywords

EID: 12744265210     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Conference Paper

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