Lattice strain induced by boron clusters in crystalline silicon

Semiconductor Science and Technology

Volumn 21, Issue 6, 2006, Pages

  Bisognin, G ^a   De Salvador, D ^a   Napolitani, E ^a   Carnera, A ^a   Bruno, E ^b   Mirabella, S ^b   Priolo, F ^b   Mattoni, A ^c  

^a UNIVERSITY OF PADOVA   (Italy)

^b UNIVERSITY OF CATANIA   (Italy)

^c UNIVERSITY OF CAGLIARI   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CONCENTRATION (PROCESS); CRYSTALLINE MATERIALS; ION IMPLANTATION; LATTICE CONSTANTS; SILICON; STRAIN; THERMAL EFFECTS;

BORON CLUSTERS; HOST LATTICES; PROLONGED ANNEALING; SILICON LATTICE;

SEMICONDUCTING BORON;

EID: 33646717093     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/21/6/L01     Document Type: Article

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