Performance and physics of sub-50 nm strained Si on Si1-xGex-on-insulator (SGOI) nMOSFETs

Solid-State Electronics

Volumn 50, Issue 4, 2006, Pages 566-572

  Andrieu, F ^a   Ernst, T ^a   Faynot, O ^a   Rozeau, O ^a   Bogumilowicz, Y ^b   Hartmann, J M ^a   Brevard L ^a   Toffoli, A ^a   Lafond, D ^a   Ghyselen, B ^c   Fournel, F ^a   Ghibaudo, G ^d   Deleonibus, S ^a  

^a CEA LETI   (France)

^b STMICROELECTRONICS   (France)

^c PARC TECHNOLOGIQUE DES FONTAINES   (France)

^d IMEP LAHC   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ESTIMATION; OSCILLATIONS; SILICON;

ARCHITECTURE POTENTIALITY; OSCILLATION FREQUENCY; SHORT CHANNEL TRANSPORT;

MOSFET DEVICES;

EID: 33646674021     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2006.03.029     Document Type: Article

References (15)

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