Reduction in leakage current of InGaN-based light-emitting diodes by N2O plasma passivation

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4776, Issue , 2002, Pages 247-254

  Kim, Hyun Min ^b   Huh, Chul ^a   Park, Seong Ju ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

^b Samsung Electro Mechanics   (South Korea)

Author keywords

InGaN GaN multiple quantum well; Light emitting diode; Passivation; Plasma treatment; Reverse leakage

Indexed keywords

DRY ETCHING; GALLIUM NITRIDE; LEAKAGE CURRENTS; NITROGEN OXIDES; PASSIVATION; PLASMA APPLICATIONS; RELIABILITY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

INDIUM GALLIUM NITRIDE; PLASMA PASSIVATION; REVERSE LEAKAGE;

LIGHT EMITTING DIODES;

EID: 0036983577     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.452566     Document Type: Conference Paper

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