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Volumn 892, Issue , 2006, Pages 457-460

Characteristics of a phosphorus-doped p-type ZnO film by MBE

Author keywords

[No Author keywords available]

Indexed keywords

HALL EFFECT; HOLE MOBILITY; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DOPING; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

EXCITON EMISSION; GAP EFFUSION CELL; ROOM TEMPERATURE (RT);

ZINC OXIDE;

EID: 33646427458 PISSN: 02729172 EISSN: None Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper

Times cited : (2)

References (14)

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