Fabrication of field-effect transistor devices with fullerodendron by solution process

Applied Physics Letters

Volumn 88, Issue 17, 2006, Pages

  Kusai, Haruka ^a,b   Nagano, Takayuki ^a,b   Imai, Kumiko ^a,b   Kubozono, Yoshihiro ^a,b   Sako, Yuuki ^a   Takaguchi, Yutaka ^a   Fujiwara, Akihiko ^b,c   Akima, Nima ^b,d   Iwasa, Yoshihiro ^b,d   Hino, Shojun ^e  

^a OKAYAMA UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

^d TOHOKU UNIVERSITY   (Japan)

^e CHIBA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; FULLERENES; HEAT CONDUCTION; SILICONES; SUBSTRATES; THERMOANALYSIS; THIN FILMS;

CHANNEL CONDUCTION; FIELD-EFFECT MOBILITY; MOBILITY GAP; OPTICAL GAP; SOLUTION PROCESS;

FIELD EFFECT TRANSISTORS;

EID: 33646403218     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2198098     Document Type: Article

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