Interconnect capacitance characterization using charge-injection-induced error-free (CIEF) charge-based capacitance measurement (CBCM)

IEEE Transactions on Semiconductor Manufacturing

Volumn 19, Issue 1, 2006, Pages 50-55

  Chang, Yao Wen ^b,c,d   Chang, Hsin Wen ^b,c,d   Lu, Tao Cheng ^b,c,e   King, Ya Chin ^c   Ting, Wenchi ^b,c   Ku, Yen Hui Joseph ^b,c,f   Lu, Chih Yuan ^a,b,c,g,h,i  

^a IEEE   (Taiwan)

^b MACRONIX INTERNATIONAL CO LTD   (Taiwan)

^c NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^d Device Engineering Department   (Taiwan)

^e Device Technology Division   (Taiwan)

^f Technology Development Center   (Taiwan)

^g Ardentec Corporation   (Taiwan)

^h Macronix International Company ^*

ⁱ AMERICAN PHYSICAL SOCIETY   (United States)

Author keywords

Capacitance measurement; Charge injection; Charge based capacitance measurement (CBCM); Interconnect capacitance

Indexed keywords

CHARGE INJECTION; CHARGE-BASED CAPACITANCE MEASUREMENT (CBCM); INTERCONNECT CAPACITANCE;

ELECTRIC CHARGE; INDUSTRIAL APPLICATIONS; OPTICAL INTERCONNECTS; SILICON;

CAPACITANCE MEASUREMENT;

EID: 33144455985     PISSN: 08946507     EISSN: None     Source Type: Journal    
DOI: 10.1109/TSM.2005.863228     Document Type: Conference Paper

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