Effects of nitrogen-incorporated interface layer on the transient characteristics of hafnium oxide n -metal-oxide-semiconductor field-effect transistors

Applied Physics Letters

Volumn 86, Issue 12, 2005, Pages 1-3

  Kang, Chang Yong ^a   Rhee, Se Jong ^a   Choi, Chang Hwan ^a   Kang, Chang Seok ^a   Choi, Rino ^a   Akbar, Mohammad S ^a   Zhang, Manhong ^a   Krishnan, Siddarth A ^a   Lee, Jack C ^a  

^a The University of Texas at Austin   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CHARGE TRANSFER; DIELECTRIC PROPERTIES; ELECTRIC POTENTIAL; ELECTRON MOBILITY; FIELD EFFECT TRANSISTORS; HAFNIUM COMPOUNDS; INTERFACES (MATERIALS); NITROGEN; SEMICONDUCTOR MATERIALS; SURFACE PHENOMENA;

CHARGE DENSITY; INTERFACE LAYERS; INTERFACE TRAPS; TRANSIENT CHARACTERISTICS;

MOSFET DEVICES;

EID: 17944376760     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1890479     Document Type: Article

References (9)

1. K. Onishi, Rino Choi, Chang Seok Kang, Hag-Ju Cho, Young Hee Kim, R. E. Nieh, Jeong Han; S. A. Krishnan, M. S. Akbar, and J. C. Lee, IEEE Trans. Electron Devices 50, 1517 (2003).
2. Chang Seok Kang, Hag-Ju Cho, Rino Choi, Young-Hee Kim, Chang Yong Kang, Se Jong Rhee, Changhwan Choi, M. S. Akbar, and J. C. Lee, IEEE Trans. Electron Devices 51, 220 (2004).
3. Hag-Ju Cho, Chang Seok Kang, K. Onishi, S. Gopalan, R. Nieh, Rino Choi, S. Krishnan, and J. C. Lee, IEEE Electron Device Lett. 23, 249 (2002).
4. K. Onishi, Chang Seok Kang, Rino Choi, Hag-Ju Cho, Young Hee Kim, R. E. Nieh, S. A. Krishnan, and J. C. Lee, Symposium on Very Large Scale Integrated Technology Digest, 2002, p. 22.
5. Se Jong Rhee, Chang Yong Kang, Chang Seok Kang, Rino Choi, Chang Hwan Choi, Mohammad S. Akbar, and Jack C. Lee, Appl. Phys. Lett. 85, 1286 (2004).
6. L. Pantisano, E. Cartier, A. Kerber, R. Degraeve, M. Lorenzini, M. Rosmeulen, G. Groeseneken, and H. E. Maes, Symposium on Very Large Scale Integrated Technology Digest, 2003, p. 163.
7. R. Degraeve, A. Kerber, P. Roussell, E. Cartier, T. Kauerauf, L. Pantisano, and G. Groeseneken, Tech. Dig. - Int. Electron Devices Meet. 2003, 38.5.1-38.5.4 (2003).
8. C. Y. Kang, H.-J. Cho, C. S. Kang, R. Choi, Y. H. Kim, S. J. Rhee, C. H. Choi, A. Shahriar, and J. C. Lee, Proceeding of IRPS, 2004, p. 587.
9. C. Y. Kang, H. Cho, R. Choi, C. S. Kang, Y. H. Kim, S. J. Rhee, C. H. Choi, Shahriar, M. Akbar, and J. Lee, Appl. Phys. Lett. 84, 2148 (2004).