Trapping and detrapping mechanism in hafnium based dielectrics characterized by pulse gate voltage techniques

IEEE International Integrated Reliability Workshop Final Report

Volumn , Issue , 2004, Pages 125-127

  Ribes, G ^a,b   Bruyere S ^a   Roy, D ^a   Muller, M ^d   Denais, M ^a,c   Huard, V ^d   Skotnicki, T ^a   Ghibaudo, G ^b  

^a STMICROELECTRONICS   (France)

^b IMEP LAHC   (France)

^c AIX MARSEILLE UNIVERSITÉ   (France)

^d CRandD labs   (France)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS; ELECTRIC CHARGE; ELECTRIC POTENTIAL; ELECTRODES; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; INTERFACES (MATERIALS); MAGNETIC HYSTERESIS; TRANSISTORS;

DETRAPPING MECHANISM; GATE OXIDES; HAFNIUM BASED DIELECTRICS; PULSE GATE VOLTAGE TECHNIQUES;

ELECTRON TRAPS;

EID: 21644441522     PISSN: 19308841     EISSN: 23748036     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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