High speed anisotropic etching of quartz using SF 6/C 4F 8/Ar/O 2 based chemistry in inductively coupled plasma reactive ion etching system

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6111, Issue , 2006, Pages

  Goyal, Abhijat ^a   Hood, Vincent ^a   Tadigadapa, Srinivas ^a  

^a The Pennsylvania State University   (United States)

Author keywords

Anisotropic Etching; Design of Experiment; Dry Etching; Glass; Inductively Coupled Plasma; Linear Regression; Micro Electro Mechanical Systems (MEMS); Oxide; Reactive Ion Etching; Silicon

Indexed keywords

ANISOTROPIC ETCHING; DESIGN OF EXPERIMENT; LINEAR REGRESSION; MICRO ELECTRO MECHANICAL SYSTEMS (MEMS);

DRY ETCHING; GLASS; INDUCTIVELY COUPLED PLASMA; OPTIMIZATION; OXIDES; SILICON; SURFACE ROUGHNESS;

QUARTZ;

EID: 33646103683     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.657730     Document Type: Conference Paper

References (17)

1. Pandey, A.K. and R. Pratap, Coupled nonlinear effects of surface roughness and rarefaction on squeeze film damping in MEMS structures. Journal of Micromechanics and Microengineering, 2004. 14(10): p. 1430-7.
2. Rahachou, A.I. and I.V. Zozoulenko, Effects of boundary roughness on a Q factor of \vhispering-gallery-mode losing microdisk cavities. Journal of Applied Physics, 2003. 94(12): p. 7929-31.
3. Bhiladvala, R.B. and Z.J. Wang, Effect of fluids on the Q factor and resonance frequency of oscillating micrometer and nanometer scale beams. Physical Review E (Statistical, Nonlinear, and Soft Matter Physics), 2004. 69(3): p. 36307-1.
4. Ohwada, K., et al., Uniform groove-depths in (110) Si anisotropic etching by ultrasonic waves and application to accelerometer fabrication. Sensors and Actuators A (Physical) Eighth IEEE International Workshop on Micro Electro Mechanical Systems, MEMS '95, 29 Jan.-2 Feb. 1995, 1995. A50(1-2): p. 93-8.
5. Jansen, H., M. de Boer, and M. Elwenspoek. The black silicon method. VI. High aspect ratio trench etching for MEMS applications, in Proceedings of Ninth International Workshop on Micro Electromechanical Systems, 11-15 Feb. 1996. 1996. San Diego, CA, USA: IEEE.
6. Liang, W., et al., Dry etching technique for silicon of high aspect ratio in MEMS device fabrication. Micronanoelectronic Technology, 2004. 41(6): p. 30-4.
7. O, B.-H., et al., Improved etching characteristics of silicon-dioxide by enhanced inductively coupled plasma. Surface and Coatings Technology, 27th International Conference on Metallurgical Coatings and Thin Films, 10-14 April 2000, 2000. 133-134: p. 589-92.
8. Chae, H., S.A. Vitale, and H.H. Sawin, Silicon dioxide etching yield measurements with inductively coupled fluorocarbon plasmas. Journal of Vacuum Science & Technology A (Vacuum, Surfaces, and Films), 2003. 21(2): p. 381-7.
9. Doemling, M.F., N.R. Rueger, and G.S. Oehrlein, Observation of inverse reactive ion etching lag for silicon dioxide etching in inductively coupled plasmas. Applied Physics Letters, 1996. 68(1): p. 10-12.
10. Rueger, N.R., et al., Role of steady state fluorocarbon films in the etching of silicon dioxide using CHF/sub 3/ in an inductively coupled plasma reactor. Journal of Vacuum Science & Technology A (Vacuum, Surfaces, and Films), 1997. 15(4): p. 1881-9.
11. Cho, S.-B., et al., Improved etch characteristics of SiO/sub 21 by the enhanced inductively coupled plasma. Journal of Vacuum Science & Technology A (Vacuum, Surfaces, and Films), 47th International Symposium of the American Vacuum Society, 2-6 Oct. 2000, 2001. 19(4, pt.1-2): p. 1308-11.
12. Abe, T. and M. Esashi, One-chip multichannel quart: crystal microbalance (QCM) fabricated by deep RIE. Sensors and Actuators A [Physical], 2000. A82(1-3): p. 139-43.
13. Li, L., M. Esashi, and T. Abe, A miniaturized biconvex quartz-crystal microbalance with large-radius spherical thickness distribution. Applied Physics Letters, 2004. 85(13): p. 2652-2654.
14. Madou, M.J., Fundamentals of Microfabrication: The Science of Miniaturization. 2nd Edition ed. 2002, Boca Raton, Florida: CRC Press.
15. Montgomery, D.C., Design and analysis of experiments. 6 ed. 2004: John Wiley and Sons.
16. Ishikawa, K. and M. Sekine, Early-stage modification of a silicon oxide surface in fluorocarbon plasma for selective etching over silicon. Journal of Applied Physics, 2002. 91(3): p. 1661-6.
17. Goyal, A., V. Hood, and S. Tadigadapa, High Speed Anisotropic Etching of Pyrex® for Microsystems Applications. Journal of Non-Crystalline Solids, to appear in January, 2006.