|
|
Volumn 91, Issue 3, 2002, Pages 1661-1666
|
|
Early-stage modification of a silicon oxide surface in fluorocarbon plasma for selective etching over silicon
|
|
Author keywords
[No Author keywords available]
|
|
Indexed keywords
A-C:F FILMS;
ATTENUATED TOTAL REFLECTION-INFRARED;
CYCLOBUTANES;
ETCHING PROCESS;
FLUOROCARBON PLASMA;
IN-SITU;
INFRARED ANALYSIS;
INFRARED SPECTRUM;
OXIDE ETCHING;
SELECTIVE ETCHING;
SILICON OXIDE SURFACES;
SILICON SURFACES;
STEADY-STATE VALUES;
THICKNESS OF THE FILM;
TIME-RESOLVED;
AMORPHOUS CARBON;
BUTANE;
ETCHING;
FLUORINE;
SILICA;
SILICON OXIDES;
AMORPHOUS FILMS;
|
|
EID: 0036469907
PISSN: 00218979
EISSN: None
Source Type: Journal
DOI: 10.1063/1.1430882 Document Type: Article |
|
Times cited : (12)
|
|
References (5)
|
