Improved etch characteristics of SiO2 by the enhanced inductively coupled plasma

Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films

Volumn 19, Issue 4, 2001, Pages 1308-1311

  Cho, S B ^a   Song, H Y ^a   Park, S G ^a   O, B H ^a  

^a Inha University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ASPECT RATIO; INDUCTIVELY COUPLED PLASMA; MAGNETIC FIELD EFFECTS; PASSIVATION; PHOTORESISTS; PLASMAS; REACTIVE ION ETCHING; SCANNING ELECTRON MICROSCOPY;

CONTACT HOLES;

SILICA;

EID: 0035391257     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1353537     Document Type: Article

References (10)