Reordering of implanted amorphous Si layers with low temperature RTA

Proceedings of the International Conference on Ion Implantation Technology

Volumn 1, Issue , 1999, Pages 642-645

  Nambu, Y ^a   Shibata, S ^a   Itonaga, K ^a   Hashimoto, S ^a   Fuse, G ^a  

^a PANASONIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; AMORPHOUS SILICON; ELLIPSOMETRY; RAPID THERMAL ANNEALING; SEMICONDUCTING GERMANIUM; SEMICONDUCTOR DOPING; SPECTROSCOPY;

REORDERING PROCESS; SPECTROSCOPIC ELLIPSOMETRY;

ION IMPLANTATION;

EID: 0033323605     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)