Self-aligned PTSI fully silicided (fusi) metal gates for 45 NM CMOS applications

Proceedings - Electrochemical Society

Volumn PV 2005-05, Issue , 2005, Pages 233-240

  Van Dal, M J H ^a   Lauwers, A ^b   Cunniffe, J ^c   Verbeeck, R ^b   Vrancken, C ^b   Demeurisse, C ^b   Dao, T ^a   Tamminga, Y ^a   Veloso, A ^b   Kittl, J A ^d   Maex, K ^b  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

^b IMEC   (Belgium)

^c TRINITY COLLEGE DUBLIN   (Ireland)

^d TEXAS INSTRUMENTS   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; ETCHING; OXYGEN; PLATINUM; SILICA; THIN FILMS;

FULLY SILICIDED (FUSI); METAL WET ETCH;

GATES (TRANSISTOR);

EID: 31844439376     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

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4. M.J. Rand and J.F. Roberts, Appl. Phys. Lett., 24 (1974) 49.
5. C.-A. Chang, J. Appl. Phys., 58, (1985) 1412.