Dual metal gate process by metal substitution of dopant-free polysilicon on high-K dielectric

Digest of Technical Papers - Symposium on VLSI Technology

Volumn 2005, Issue , 2005, Pages 48-49

  Park, Chang Seo ^a   Cho, Byung Jin ^a   Hwang, Wan Sik ^a   Loh, Wei Yip ^b   Tang, Lei Jun ^b   Kwong, Dim Lee ^b  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS; DOPING (ADDITIVES); FERMI LEVEL; FUNCTIONS;

METAL GATE INTEGRATION SCHEME; POLYSILICON PRE-DOPING; WORK FUNCTION;

POLYSILICON;

EID: 29244444763     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/.2005.1469207     Document Type: Conference Paper

References (9)

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