Transition from brittleness to ductility in SiC

Journal of Physics Condensed Matter

Volumn 14, Issue 48, 2002, Pages 12929-12945

  Pirouz, P ^a   Zhang, M ^a   Demenet, J L ^b   Hobgood, H M ^c  

^a Case Western Reserve University   (United States)

^b CNRS   (France)

^c Arkansas Power Electronics International Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BRITTLENESS; DUCTILITY; ELASTICITY; ENERGY GAP; MECHANICAL VARIABLES MEASUREMENT; PHASE TRANSITIONS; SINGLE CRYSTALS; STRAIN RATE; SUPERCONDUCTING TRANSITION TEMPERATURE; YIELD STRESS;

CRYSTAL BRITTLE CLEAVAGE; DUCTILE DEFORMATION; FOUR POINT BEND TEST; WIDE BANDGAP SEMICONDUCTOR;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0037122154     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/14/48/335     Document Type: Article

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