Microscopic structure of the 90° and 30° partial dislocations in gallium arsenide

Journal of Physics Condensed Matter

Volumn 14, Issue 48, 2002, Pages 12749-12754

  Justo, João F ^a   Nunes, R W ^b   Assali, L V C ^a  

^a UNIVERSITY OF SÃO PAULO   (Brazil)

^b FEDERAL UNIVERSITY OF MINAS GERAIS   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ATOMIC STRUCTURE; DISLOCATIONS (CRYSTALS); PROBABILITY DENSITY FUNCTION; SEMICONDUCTOR DEVICE MODELS; STACKING FAULTS;

AB INITIO TOTAL ENERGY METHODS; DENSITY FUNCTIONAL THEORY; PARTIAL DISLOCATIONS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0037122137     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/14/48/312     Document Type: Article

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