Influence of Si-nanocrystal distribution in the oxide on the charging behavior of MOS structures

IEEE Transactions on Electron Devices

Volumn 53, Issue 4, 2006, Pages 914-917

  Liu, Y ^a   Chen, T P ^a   Ng, C Y ^a   Ding, L ^a   Tse, M S ^a   Fung, S ^b   Tseng, Ampere A ^c  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b UNIVERSITY OF HONG KONG   (Hong Kong)

^c Arizona State University   (United States)

Author keywords

Charging behavior; Nanocrystal; Si nanocrystal (nc Si) distribution

Indexed keywords

CAPACITANCE; COMPOSITION EFFECTS; ELECTRIC CHARGE; ELECTRIC POTENTIAL; NANOSTRUCTURED MATERIALS; OXIDES; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES;

FLAT BAND VOLTAGE SHIFT; MEMORY PROGRAMMING; SILICON NANOCRYSTAL DISTRIBUTION;

MOS DEVICES;

EID: 33645750547     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2006.870528     Document Type: Article

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