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Volumn 39, Issue 16, 2003, Pages 1164-1166

Charging effect of Si nanocrystals in gate oxide near gate on MOS capacitance

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; ELECTRIC POTENTIAL; GATES (TRANSISTOR); NANOSTRUCTURED MATERIALS;

EID: 0041929304     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20030772     Document Type: Article
Times cited : (8)

References (3)
  • 2
    • 79955987719 scopus 로고    scopus 로고
    • Room-temperature single-electron charging phenomena in large-area nanocrystal memory obtained by low-energy ion beam synthesis
    • KAPETANAKIS, E., NORMAND, P., TSOUKALAS. D., and BELTSIOS, K.: 'Room-temperature single-electron charging phenomena in large-area nanocrystal memory obtained by low-energy ion beam synthesis', Appl. Phys. Lett., 2002, 80, pp. 2794
    • (2002) Appl. Phys. Lett. , vol.80 , pp. 2794
    • Kapetanakis, E.1    Normand, P.2    Tsoukalas, D.3    Beltsios, K.4
  • 3
    • 0035796662 scopus 로고    scopus 로고
    • Nanocrystals acting as Coulomb islands operating at room temperature created using a focused ion-beam process
    • KIM, T.W., CHOO, D.T., SHIM, J.H., JUNG, M., KANG. S.O., LEE, H.S., and LEE, J.Y.: 'Nanocrystals acting as Coulomb islands operating at room temperature created using a focused ion-beam process', Appl. Phys. Lett., 2001, 79, pp. 120
    • (2001) Appl. Phys. Lett. , vol.79 , pp. 120
    • Kim, T.W.1    Choo, D.T.2    Shim, J.H.3    Jung, M.4    Kang, S.O.5    Lee, H.S.6    Lee, J.Y.7


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.