메뉴 건너뛰기




Volumn 24 I, Issue , 2004, Pages 253-256

A novel SPICE macromodel of BJTs including the temperature dependence of high-injection effects

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTIVITY; ELECTRIC POTENTIAL; GATES (TRANSISTOR); MATHEMATICAL MODELS; SEMICONDUCTOR JUNCTIONS; THERMAL CONDUCTIVITY; TRANSISTORS;

EID: 3142689612     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (8)

References (8)
  • 2
    • 0032292816 scopus 로고    scopus 로고
    • Electrothermal SPICE macromodeling of the power bipolar transistor including the avalanche and secondary breakdowns
    • A. Maxim and G. Maxim, "Electrothermal SPICE Macromodeling of the Power Bipolar Transistor Including the Avalanche and Secondary Breakdowns", in Proc. IEEE Industrial Electronics Conference (IECON), Vol. 1, pp. 348-352, 1998.
    • (1998) Proc. IEEE Industrial Electronics Conference (IECON) , vol.1 , pp. 348-352
    • Maxim, A.1    Maxim, G.2
  • 5
    • 0742304012 scopus 로고    scopus 로고
    • A back-wafer contacted silicon-on-glass integrated bipolar process, part II - A novel analysis of thermal breakdown
    • N. Nenadović, V. d'Alessandro, L. K. Nanver, F. Tamigi, N. Rinaldi, and J. W. Slotboom, "A Back-Wafer Contacted Silicon-On-Glass Integrated Bipolar Process, Part II - A Novel Analysis of Thermal Breakdown", in IEEE Trans. on Electron Devices, Vol. 51, no. 1, pp. 51-62, 2004.
    • (2004) IEEE Trans. on Electron Devices , vol.51 , Issue.1 , pp. 51-62
    • Nenadović, N.1    D'Alessandro, V.2    Nanver, L.K.3    Tamigi, F.4    Rinaldi, N.5    Slotboom, J.W.6


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.