The impact of the density and type of reactive sites on the characteristics of the atomic layer deposited WNxCy films

Journal of Applied Physics

Volumn 99, Issue 6, 2006, Pages

  Hoyas, A M ^a,b   Travaly, Y ^a   Schuhmacher, J ^a   Sajavaara, T ^a,d   Whelan, C M ^a   Eyckens, B ^a   Richard, O ^a   Giangrandi, S ^a,b   Brijs, B ^a   Vandervorst, W ^a,b   Maex, K ^a,b   Celis, J P ^b   Jonas, A M ^c   Vantomme, A ^d  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c UNIVERSITÉ CATHOLIQUE DE LOUVAIN   (Belgium)

^d KU LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; SILICA; SILICON CARBIDE; SILICON NITRIDE; SURFACE ROUGHNESS; THICKNESS MEASUREMENT; TUNGSTEN CARBIDE;

ATOMIC LAYER DEPOSITION; ELASTIC RECOIL DETECTION SPECTROSCOPIES; TUNGSTEN NITRIDE CARBIDE;

FILM GROWTH;

EID: 33645692814     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2182074     Document Type: Article

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