Pulse waveform dependence on AC bias temperature instability in pMOSFETs

IEEE Electron Device Letters

Volumn 26, Issue 9, 2005, Pages 658-660

  Zhu, Shiyang ^a   Nakajima, Anri ^a   Ohashi, Takuo ^b   Miyake, Hideharu ^b  

^a HIROSHIMA UNIVERSITY   (Japan)

^b Elpida Memory Inc   (Japan)

Author keywords

Bias temperature instability (BTI); Dynamic stress; Interface trap generation; pMOSFET; Pulse waveform

Indexed keywords

CMOS INTEGRATED CIRCUITS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC WAVEFORMS; ELECTRON TRAPS; SEMICONDUCTING SILICON; THERMAL EFFECTS; WAVEFORM ANALYSIS;

BIAS TEMPERATURE INSTABILITY (BTI); DYNAMIC STRESS; INTERFACE TRAP GENERATION; PULSE WAVEFORM;

MOSFET DEVICES;

EID: 26444568635     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2005.853645     Document Type: Article

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