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Volumn 20, Issue 3, 1999, Pages 129-131

Planarized Copper Gate Hydrogenated Amorphous-Silicon Thin-Film Transistors for AM-LCD's

Author keywords

AM LCD; Amorphous semiconductors devices; Planarization; Thin film transistors

Indexed keywords

AMORPHOUS SILICON; COPPER; HYDROGENATION; LIQUID CRYSTAL DISPLAYS;

EID: 0033098896     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.748910     Document Type: Article
Times cited : (28)

References (9)
  • 1
    • 0029521643 scopus 로고
    • Limitations and prospects of a-Si:H TFT's
    • W. E. Howard, "Limitations and prospects of a-Si:H TFT's," J. Soc. Infom. Display, vol. 3, pp. 127-132, 1995.
    • (1995) J. Soc. Infom. Display , vol.3 , pp. 127-132
    • Howard, W.E.1
  • 4
    • 0031212637 scopus 로고    scopus 로고
    • Self-passivated copper gates for amorphous silicon thin-film transistors
    • Aug.
    • H. Sirringhaus, A. Kahn, and S. Wagner, "Self-passivated copper gates for amorphous silicon thin-film transistors," IEEE Electron Device Lett., vol. 18, pp. 388-390, Aug. 1997.
    • (1997) IEEE Electron Device Lett. , vol.18 , pp. 388-390
    • Sirringhaus, H.1    Kahn, A.2    Wagner, S.3
  • 6
    • 0002919143 scopus 로고    scopus 로고
    • Single substrate plasma enhanced CVD processing system for TFT manufacturing
    • San Francisco
    • J. White, K. Law, and N. Turner, "Single substrate plasma enhanced CVD processing system for TFT manufacturing," in Proc. 1994 Display Manufact. Technol. Conf., San Francisco, pp. 95-96.
    • Proc. 1994 Display Manufact. Technol. Conf. , pp. 95-96
    • White, J.1    Law, K.2    Turner, N.3
  • 7
    • 0010318913 scopus 로고    scopus 로고
    • Benzocyclobutene as a planarization overcoat for flat panel displays
    • D. J. Perettie, M. J. Radler, and T. Takahashi, "Benzocyclobutene as a planarization overcoat for flat panel displays," Asia Display '95, pp. 721-724.
    • Asia Display '95 , pp. 721-724
    • Perettie, D.J.1    Radler, M.J.2    Takahashi, T.3
  • 8
    • 0027735508 scopus 로고
    • Electrical properties of amorphous silicon transistors and MIS-devices: Comparative study of top nitride and bottom nitride configurations
    • A. Rolland, J. Richard, J. P. Kleider, and D. Mencaraglia, "Electrical properties of amorphous silicon transistors and MIS-devices: Comparative study of top nitride and bottom nitride configurations," J. Electrochem. Soc., vol. 140, pp. 3679-3683, 1993.
    • (1993) J. Electrochem. Soc. , vol.140 , pp. 3679-3683
    • Rolland, A.1    Richard, J.2    Kleider, J.P.3    Mencaraglia, D.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.