Effects of the technology of implanting nitrogen into buried oxide layer on the characteristics of partially depleted SOI nMOSFET

Wuli Xuebao/Acta Physica Sinica

Volumn 54, Issue 1, 2005, Pages 348-353

  Zheng, Zhong Shan ^a,c   Liu, Zhong Li ^a   Zhang, Guo Qiang ^a   Li, Ning ^a   Fan, Kai ^a   Zhang, En Xia ^b   Yi, Wan Bing ^b   Chen, Meng ^b   Wang, Xi ^b  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

^c UNIVERSITY OF JINAN   (China)

Author keywords

Electron mobility; Nitrogen implantation; nMOSFET; SOI; Threshold voltage

Indexed keywords

EID: 14044250872     PISSN: 10003290     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (13)